Journal
SUPERLATTICES AND MICROSTRUCTURES
Volume 110, Issue -, Pages 171-179Publisher
ACADEMIC PRESS LTD- ELSEVIER SCIENCE LTD
DOI: 10.1016/j.spmi.2017.08.047
Keywords
Aluminum-doped zinc oxide (AZO); Stair-like transparent layer; GaN; Light-emitting diode (LED); Current crowding effect; Current-spreading
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Funding
- Ministry of Science and Technology of the Republic of China [MOST 106-2221-E-017-011, 104-2221-E-017-007-MY2]
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The GaN-based light-emitting diodes (LEDs) with various height ratios of aluminum-doped zinc oxide (AZO) stair-like transparent layers are fabricated and comparatively investigated. The characteristics of the LEDs with conventional plane AZO transparent layer (device A) and AZO stair-like transparent layers having height ratios of 1:1:1 (device B), 1.5:1:0.5 (device C), and 0.5:1:1.5 (device D) are compared. Attributed that the lower resistance is formed in the thinner AZO film of the stair-like structure, the current crowding effect is improved for extending the whole current-spreading area. Experimentally, the forward turn-on voltages of the LEDs are reduced from 3.68 V to 3.42 V as the plane AZO transparent layer is processed to form the stair-like transparent layers with height ratio of 1:1:1. In addition, the light luminous flux, output power, external quantum efficiency, and wall-plug efficiency of the device B are enhanced by 30.5, 12.1, 22.2, and 20.7%, respectively, as compared to the traditional device with plane AZO transparent layer. (C) 2017 Elsevier Ltd. All rights reserved.
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