Journal
2D MATERIALS
Volume 4, Issue 2, Pages -Publisher
IOP PUBLISHING LTD
DOI: 10.1088/2053-1583/4/2/021012
Keywords
transition metal dichalcogenides; interfaces; conductivity; photoresponse; edge states; heterostructures
Categories
Funding
- Institute for Sustainability and Energy at Northwestern (nanoelectronics)
- U.S. Department of Energy, Office of Basic Energy Sciences [DE-SC0012130]
- National Science Foundation's MRSEC program [DMR-1121262]
- Soft and Hybrid Nanotechnology Experimental (SHyNE) Resource [NSF NNCI-1542205]
- MRSEC program at the Materials Research Center [NSF DMR-1121262]
- International Institute for Nanotechnology (IIN)
- Keck Foundation
- State of Illinois
- U.S. Department of Energy (DOE) [DE-SC0012130] Funding Source: U.S. Department of Energy (DOE)
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Energy band realignment at the interfaces between materials in heterostructures can give rise to unique electronic characteristics and non-trivial low-dimensional charge states. In a homojunction of monolayer and multilayer MoS2, the thickness-dependent band structure implies the possibility of band realignment and a new interface charge state with properties distinct from the isolated layers. In this report, we probe the interface charge state using scanning photocurrent microscopy and gate-dependent transport with source-drain bias applied along the interface. Enhanced photoresponse observed at the interface is attributed to band bending. The effective conductivity of a material with a monolayer-multilayer interface of MoS2 is demonstrated to be higher than that of independent monolayers or multilayers of MoS2. A classic heterostructure model is constructed to interpret the electrical properties at the interface. Our work reveals that the band engineering at the transition metal dichalcogenides monolayer/multilayer interfaces can enhance the longitudinal conductance and field-effect mobility of the composite monolayer and multilayer devices.
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