Journal
CRYSTENGCOMM
Volume 19, Issue 46, Pages 6986-6991Publisher
ROYAL SOC CHEMISTRY
DOI: 10.1039/c7ce01676j
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Funding
- National Natural Science Foundation of China [51572155]
- Shandong Provincial Natural Science Foundation, China [ZR2014EMM015]
- Independent Innovation Foundation of Shandong University, IIFSDU
- National Key Research and Development Program of China [2016YFB1102201]
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Two-dimensional (2D) materials have recently attracted great interest due to their promising optoelectronic applications. Orthorhombic SiP (o-SiP) is a 2D layered crystal and may have a significant impact on optoelectronic technologies. Large-sized bulk o-SiP single crystals have been successfully grown by a seeded flux method. The size and morphology of o-SiP crystals can be controlled by changing the growth conditions. The carrier mobility and band gap of o-SiP were characterized in detail. The photoresponse properties of o-SiP were investigated and a relatively fast response has been demonstrated. The experimental results indicate that o-SiP may be an excellent candidate for applications in electronics and optoelectronics.
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