Journal
PROCEEDINGS OF THE SNEC 11TH INTERNATIONAL PHOTOVOLTAIC POWER GENERATION CONFERENCE & EXHIBITION
Volume 130, Issue -, Pages 36-42Publisher
ELSEVIER SCIENCE BV
DOI: 10.1016/j.egypro.2017.09.411
Keywords
High-performance multicrystalline silicon; phosphorus diffusion gettering (PDG); boron diffusion gettering (BDG); ICP-MS; trace metal impurities; diffusion
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Funding
- National University of Singapore (NUS)
- National Research Foundation of Singapore through the Singapore Economic Development Board
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Multicrystalline silicon (multi-Si) is currently the most widely used material for crystalline silicon solar cells. Although there has been substantial improvement in cell efficiency with the use of high-performance (HP) multi-Si, the PERC (passivated emitter and rear cell) devices fabricated from this material suffer from strong light-induced degradation (LID). This study aims to investigate the possibility of reducing LID in HP multi-Si wafers using diffusion gettering. By using inductively coupled plasma mass spectrometry, we measured the impurity concentration in sister samples subjected to different diffusion conditions. The results showed that a 5042/sq POC13 diffusion and 6042/sq BBr3 diffusion at 800 degrees C can getter impurities effectively. The interstitial Fe (Fe;) and light-induced defect concentration was measured before and after gettering, using surface photovoltage measurements. After degrading the samples at 80 degrees C for 24 hours, we observed that the light-induced defect concentration is lowest in HP multi-Si wafers that underwent phosphorus diffusion gettering. Samples subjected to boron diffusion gettering also show less LID compared to non-diffused sister samples. (C) 2017 The Authors. Published by Elsevier Ltd.
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