Journal
7TH INTERNATIONAL CONFERENCE ON SILICON PHOTOVOLTAICS, SILICONPV 2017
Volume 124, Issue -, Pages 31-37Publisher
ELSEVIER SCIENCE BV
DOI: 10.1016/j.egypro.2017.09.336
Keywords
free carrier absorption; passivating contacts; poly-Si; TOPCon
Funding
- Ministry of Economic Affairs and Energy [0325877D]
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The scope of this paper lies on the phenomenon of free-carrier absorption (FCA) in heavily phosphorus -doped poly-Si layers, applied at solar cells featuringpoly-Si/SiOx passivating contacts at the rear. Firstly, FCA is investigated on test structures featuring poly-Si contacts of different thickness and doping level. Secondly, these passivating contacts are integrated into the rear of solar cells featuring a boron-diffused emitter at the front. The infrared (IR) response of the solar cells is analyzed and FCA losses are quantified. In agreement with theory, it is shown that J(sc). losses due to FCA increase with poly -Si doping level and thickness. For instance, a total Js. loss of 0.5 mA/cm(2) is obtained for a 145 nm thick poly Si layer with a doping concentration of 1.9x102 cm(-3). (C) 2017 The Authors. Published by Elsevier Ltd.
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