Journal
7TH INTERNATIONAL CONFERENCE ON SILICON PHOTOVOLTAICS, SILICONPV 2017
Volume 124, Issue -, Pages 593-597Publisher
ELSEVIER SCIENCE BV
DOI: 10.1016/j.egypro.2017.09.295
Keywords
PEDOT:PSS; heterojunctions; solar cells; V-oc potential
Funding
- German State of Lower Saxony
- German Federal Ministry of Economics and Energy [0325884A]
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In this study, we demonstrate the high surface passivation quality of PEDOT:PSS/c-Si junctions for the first time on solar cell level, reaching a record high V-oc value of 688 mV after full-area metallization of the PEDOT:PSS. We achieve this by combining the PEDOT:PSS hole-selective layer at the rear of the crystalline silicon wafer with a well-passivating electron-selective a-Si:H(i/n) layer stack at the front. Our results clearly prove the excellent hole selectivity of PEDOT:PSS on crystalline silicon. (C) 2017 The Authors. Published by Elsevier Ltd.
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