Journal
7TH INTERNATIONAL CONFERENCE ON SILICON PHOTOVOLTAICS, SILICONPV 2017
Volume 124, Issue -, Pages 441-447Publisher
ELSEVIER SCIENCE BV
DOI: 10.1016/j.egypro.2017.09.272
Keywords
silicon solar cell; titanium oxide; atomic layer deposition; surface passivation; electron-selective contact
Funding
- German Federal Environmental Foundation (DBU)
- German State of Lower Saxony
Ask authors/readers for more resources
We characterize the surface passivation properties of ultrathin titanium oxide (TiOx) films deposited by atomic layer deposition (ALD) on crystalline silicon by means of carrier lifetime measurements. We compare different silicon surface treatments prior to TiOx deposition, such as native silicon oxide (SiOy), chemically grown SiOy and thermally grown SiOy. The best passivation quality is achieved with a native SiOy grown over 4 months and a TiOx layer thickness of 5 nm, resulting in an effective lifetime of 1.2 ms on 1.3 Omega cm p-type float-zone silicon. The measured maximum lifetime corresponds to an implied open-circuit voltage (iV(oc)) of 710 mV. For thinner TiOx layers the passivation quality is reduced, however, samples passivated with only 2 nm of TiOx still show a lifetime of 612 us and an iV(oc) of 694 mV. The contact resistivity of the TiOx including the SiOy interlayer between the silicon wafer and the TiOx is below 0.8 Omega cm(2). The combination of excellent surface passivation and low contact resistivity has the potential for silicon solar cells with efficiencies exceeding 26%. (C) 2017 The Authors. Published by Elsevier Ltd.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available