Journal
SOLID STATE SCIENCES
Volume 71, Issue -, Pages 130-138Publisher
ELSEVIER SCIENCE BV
DOI: 10.1016/j.solidstatesciences.2017.07.013
Keywords
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Funding
- Act 211 of the Government of Russian Federation [02.A03.21.0006]
- Government Assignment of Russian Ministry of Education and Science [3.1485.2017/]
- Russian Science Foundation [14-22-00004]
- Ministry of Education and Science of the Russian Federation [3.7372.2017]
- Russian Science Foundation [17-22-00001] Funding Source: Russian Science Foundation
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The over threshold carbon-loadings (similar to 50 at.%) of initial TiO2-hosts and posterior Cu-sensitization (similar to 7 at.%) was made using pulsed ion-implantation technique in sequential mode with 1 h vacuum-idle cycle between sequential stages of embedding. The final Cx-TiO2:Cu samples were qualified using XPS wide-scan elemental analysis, core-levels and valence band mappings. The results obtained were discussed on the theoretic background employing DFT-calculations. The combined XPS-and-DFT analysis allows to establish and prove the final formula of the synthesized samples as Cx-TiO2:[Cu+][Cu2+] for the bulk and Cx-TiO2:[Cu+][Cu-0] for thin-films. It was demonstrated the in the mode of heavy carbon-loadings the remaining majority of neutral C-C bonds (sp(3)-type) is dominating and only a lack of embedded carbon is fabricating the O-C=O clusters. No valence base-band width altering was established after sequential carbon-copper modification of the atomic structure of initial TiO2-hosts except the dominating majority of Cu 3s states after Cu-sensitization. The crucial role of neutral carbon low-dimensional impurities as the precursors for the new phases growth was shown for Cu-sensitized Cx-TiO2 intermediate-state hosts. (C) 2017 Elsevier Masson SAS. All rights reserved.
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