Journal
SOLID STATE IONICS
Volume 304, Issue -, Pages 145-149Publisher
ELSEVIER SCIENCE BV
DOI: 10.1016/j.ssi.2017.04.003
Keywords
Impedance spectroscopy; DFRT; Grain boundary properties; Doped ceria
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Funding
- Nancy and Stephen Grand Technion Energy Program (GTEP)
- Israel Science Foundation (ISF) [938/15]
- Israel National Research Center for Electrochemical Propulsion [INREP 2]
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This work presents the distribution function of relaxation time (DFRT) analysis of Gd doped ceria (GDC) and cobalt co-doped GDC prepared by precipitation method. Ionic transport properties and grain-boundary phenomena are discussed thoroughly based on the DFRT. The impedance results, especially the bulk and grain-boundary conductivities (sigma(b) and sigma(gb)) and activation energies (E-b and E-gb) obtained from the ISGP, are compared with the values obtained from the Equivalent Circuit Model. Grain boundary space charge (SC) effects discussed so far in the literature, generally do not consider the defect interaction between the oxygen vacancies and acceptor dopants in ceria and other oxide ion conductors. However, ISGP study clearly evidence the coexistence of SC effect and defect association in grain boundary regions, and both contribute to the grain boundary resistance (R-gb) at lower temperatures. The effect of sintering aid (Co) on the grain boundary activity is discussed considering both phenomena. Lower sintering temperature of the samples results in a relatively smaller grain boundary potential (Phi)(0)) i.e., 0.15, 0.17 and 0.19 V at 300 degrees C in 0, 1 and 3 mol% Co co-doped GDC, respectively.
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