Journal
SOLAR ENERGY MATERIALS AND SOLAR CELLS
Volume 161, Issue -, Pages 377-381Publisher
ELSEVIER SCIENCE BV
DOI: 10.1016/j.solmat.2016.12.024
Keywords
Quantum dots; Solar cells; Drop epitaxy; Intraband; Interband; Intermediate band
Funding
- National Program on Key Basic Research Project (973 Program) [2013CB933301]
- National Natural Science Foundation of China [51302030, 61474015]
- EPSRC [EP/K029118/1] Funding Source: UKRI
- Engineering and Physical Sciences Research Council [EP/K029118/1] Funding Source: researchfish
Ask authors/readers for more resources
Traditional p-i-n junction solar cells imbedded with quantum dots are attractive to achieve chromatic light absorption enhancement. In this paper, multi-layer stacked GaAs and In0.1Ga0.9As quantum dots grown by the droplet epitaxy technique are sandwiched between Al0.4Ga0.6As layers for solar energy harvesting. The performance of GaAs and InGaAs quantum dot solar cells is compared using structural, optical, and electrical measurements. The two-step photon absorption process is studied via adding external infrared pumping sources in quantum efficiency measurements at room temperature. This work demonstrates that strain-free nanostructures by droplet epitaxy are promising for photovoltaic application.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available