4.8 Article

Facile Synthesis of γ-In2Se3 Nanoflowers toward High Performance Self-Powered Broadb and γ-In2Se3/Si Heterojunction Photodiode

Journal

SMALL
Volume 13, Issue 18, Pages -

Publisher

WILEY-V C H VERLAG GMBH
DOI: 10.1002/smll.201604033

Keywords

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Funding

  1. Program for Innovative Research Team in the University of Ministry of Education of China [IRT13R54]
  2. Fundamental Research Funds for the Central Universities [2016FZA4007, 2016XZZX001-05]
  3. NSFC [61674127, 61474099, 21325417, 51533008, 61431014]
  4. ZJ-NSF [LY16E020003, LZ17F040001]
  5. China State Key Project [2016YFA0200204]
  6. Micro-/Nanofabrication platform of the ZJU University
  7. ZJU Cyber Scholarship
  8. Cyrus Tang Center for Sensor Materials and Applications
  9. State Key Laboratory of Bioelectronics, Southeast University
  10. State Key Laboratory of Nano-devices and Applications at the Chinese Academy of Sciences [14ZS01]
  11. Churchill College at the University of Cambridge

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An effective colloidal process involving the hot-injection method is developed to synthesize uniform nanoflowers consisting of 2D gamma-In2Se3 nanosheets. By exploiting the narrow direct bandgap and high absorption coefficient in the visible light range of In2Se3, a high-quality gamma-In2Se3/Si heterojunction photodiode is fabricated. This photodiode shows a high photoresponse under light illumination, short response/ recovery times, and long-term durability. In addition, the gamma-In2Se3/Si heterojunction photodiode is self-powered and displays a broadband spectral response ranging from UV to IR with a high responsivity and detectivity. These excellent performances make the gamma-In2Se3/Si heterojunction very interesting as highly efficient photodetectors.

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