4.6 Article

Gated tuned superconductivity and phonon softening in monolayer and bilayer MoS2

Journal

NPJ QUANTUM MATERIALS
Volume 2, Issue -, Pages -

Publisher

NATURE PUBLISHING GROUP
DOI: 10.1038/s41535-017-0056-1

Keywords

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Funding

  1. National Key Basic Research Program of China [2015CB921600, 2013CBA01603]
  2. National Natural Science Foundation of China [11374142, 61574076]
  3. Natural Science Foundation of Jiangsu Province [BK20130544, BK20140017, BK20150055]
  4. Specialized Research Fund for the Doctoral Program of Higher Education [20130091120040]
  5. Fundamental Research Funds for the Central Universities
  6. Collaborative Innovation Center of Advanced Microstructures
  7. Department of Energy, Office of Basic Energy Sciences, Division of Materials Sciences and Engineering [DE-AC02-76SF00515]
  8. NSF [DMR-1305677]

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Superconductors at the atomic two-dimensional limit are the focus of an enduring fascination in the condensed matter community. This is because, with reduced dimensions, the effects of disorders, fluctuations, and correlations in superconductors become particularly prominent at the atomic two-dimensional limit; thus such superconductors provide opportunities to tackle tough theoretical and experimental challenges. Here, based on the observation of ultrathin two-dimensional superconductivity in monolayer and bilayer molybdenum disulfide (MoS2) with electric-double-layer gating, we found that the critical sheet carrier density required to achieve superconductivity in a monolayer MoS2 flake can be as low as 0.55 x 10(14) cm(-2), which is much lower than those values in the bilayer and thicker cases in previous report and also our own observations. Further comparison of the phonon dispersion obtained by ab initio calculations indicated that the phonon softening of the acoustic modes around the M point plays a key role in the gate-induced superconductivity within the Bardeen-Cooper-Schrieffer theory framework. This result might help enrich the understanding of two-dimensional superconductivity with electric-double-layer gating.

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