3.8 Proceedings Paper

Integration of 2D Materials for Advanced Devices: Challenges and Opportunities

Publisher

ELECTROCHEMICAL SOC INC
DOI: 10.1149/07901.0011ecst

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Funding

  1. SWAN Center
  2. Nanoelectronics Research Initiative
  3. NIST
  4. Center for Low Energy Systems Technology (LEAST)
  5. STARnet phase of the Focus Center Research Program (FCRP)
  6. MARCO
  7. DARPA
  8. US/Ireland R&D Partnership (UNITE) under the NSF award [ECCS-1407765]

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Two-dimensional (2D) materials have captured the imagination and significant effort in the research of advanced device concepts. In spite of interesting device physics and proof-of-concept demonstrations, the integration of such materials with mainstream Si technology remains a challenge with very significant opportunities if met. This paper looks at these challenges from the prospective of materials surface and interface research, and identifies opportunities to enable 2D materials to augment.

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