Journal
SENSORS AND ACTUATORS B-CHEMICAL
Volume 246, Issue -, Pages 408-414Publisher
ELSEVIER SCIENCE SA
DOI: 10.1016/j.snb.2017.02.085
Keywords
H2O2 treatment; AlGaOx; Hydrogen sensor; Sensing response; Schottky diode
Funding
- Ministry of Science and Technology of the Republic of China [NSC-100-2221-E-006-244-MY3]
- Advanced Optoelectronic Technology Center, National Cheng-Kung University
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Hydrogen sensing characteristics of a Pd/AlGaOx/AlGaN-based Schottky diode-type sensor are comprehensively studied. The AlGaOx dielectric layer is formed by an appropriate hydrogen peroxide (H2O2) treatment on the surface of the AIGaN layer. Experimentally, an extremely high hydrogen sensing response of 3.85 x 10(5) (under an introduced 1% H-2/air gas) and a very low detection limit of 1 ppm H-2/air gas are obtained at 300 K. This enhanced sensing performance is mainly caused by the effective dissociation of hydrogen molecules based on the presence of the AlGaOx layer. A response (recovery) time constant of 33(17) s is found upon exposure to 1% H-2/air gas at 300 K. The influence of humidity on the hydrogen sensing performance is studied in this work. Based on the improved properties, the studied device could serve as a candidate for high-performance hydrogen sensing applications. (C) 2017 Elsevier B.V. All rights reserved.
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