Journal
SENSORS AND ACTUATORS A-PHYSICAL
Volume 253, Issue -, Pages 173-180Publisher
ELSEVIER SCIENCE SA
DOI: 10.1016/j.sna.2016.07.026
Keywords
Zinc oxide; MSM UV photodetector; Low annealing temperature; Fast photoresponse
Funding
- Natural Science Foundation of China (NSFC Grant) [51572216, 61604122]
- NSFC Major Research Program on Nanomanufacturing [91323303]
- industrial science and technology research project in shaanxi province [2015GY005]
- Natural Science Research Project of Education Department of Shaanxi Provincial Government [16JS016]
- 111 Program [B14040]
- open projects from Institute of Photonics and Photo-Technology, Provincial Key Laboratory of Photoelectronic Technology, Northwest University, China
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Zinc oxide thin film UV photodetectors based metal-semiconductor-metal structure were fabricated on Au interdigital electrodes by radio frequency magnetron sputtering. The performances of the UV photodetector under different annealing and testing temperatures from RT to 200 degrees C have been studied, obtaining optimized annealing temperature and suitable working temperature range. The detailed photoresponse mechanism has been discussed by analyzing competitive behaviors of several factors. The photodetector has good photoresponse linearity across a wide range of incident light intensity, and the response time, recovery time and responsivity were 0.82 ms, 0.64 ms and 124 A/W respectively under the 2.5 mW/cm(2) at 5V applied bias. The low annealing temperature of ZnO) film makes it be applied in flexible photodetector with great potential. (C) 2016 Elsevier B.V. All rights reserved.
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