Journal
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
Volume 32, Issue 3, Pages -Publisher
IOP PUBLISHING LTD
DOI: 10.1088/1361-6641/aa59b0
Keywords
beta-Ga2O3/ZnO heterojunction; solar-blind; deep ultraviolet photodetector
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Funding
- National Natural Science Foundation of China [51572033, 61274017, 51172208, 11404029]
- Science Foundation of Zhejiang Sci-Tech University (ZSTU) [16062190-Y]
- Science and Technology Department of Zhejiang Province Foundation [2017C37017]
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A thin-film type beta-Ga2O3/ZnO heterojunction was constructed for the first time by radio frequency magnetron sputtering of a beta-Ga2O3 layer on a (0001) ZnO single crystalline substrate. The heterojunction presents a typical positive rectification in the dark, and shows a solar-blind deep ultraviolet photoelectric characteristic. Under zero bias, the photodetector based on a beta-Ga2O3/ZnO heterojunction exhibits an I-photo/I-dark ratio of similar to 14.8 under a 254 nm light illumination with a light intensity of 50 mu Wcm(-2), showing a characteristic of working with zero power consumption. The photocurrent linear increases and the response time decreases with the increase of the light intensity. The photodetector shows a R-lambda of 0.35 AW(-1) and an EQE of 1.7. x. 10(2)% under 254 nm illumination of 50 mu Wcm(-2) and a negative bias of 5 V. This study presents a promising candidate for use in solar-blind deep ultraviolet photodetection.
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