Journal
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
Volume 32, Issue 2, Pages -Publisher
IOP PUBLISHING LTD
DOI: 10.1088/1361-6641/32/2/025002
Keywords
thin films; SnS; triphenylphosphine sulfide; chemical vapor deposition; XRD; optical constants
Categories
Funding
- University of Tunis El-Manar
Ask authors/readers for more resources
Tin sulfide (SnS) thin films have been deposited onto glass substrates using triphenylphosphine sulfide (Ph3PS) as a sulfur precursor in a chemical vapor deposition reactor in a temperature range of 250 degrees C-400 degrees C. The influence of the sulphidisation temperature in the crystal structure, surface morphology, chemical composition and optical properties has been investigated. X-ray diffraction, energy dispersive analysis of x-rays, and Raman spectroscopy showed that pure SnS thin films have been successfully obtained at 250 degrees C. All the deposited films were polycrystalline and showed orthorhombic structure, with a preferential orientation according to the direction 111 . The optical measurements showed that the films deposited exhibited a direct allowed transition and have a relatively high absorption coefficient. The presence of mixed tin sulfide phases granted by the variation of the sulphidisation temperature has affected the optical properties of the deposited films. The refractive index (n) and extinction coefficient (k), has low values compared to conventional semiconductor materials. The grown films can be considered as a good light absorbing material and a promising candidate for application in optoelectronic devices.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available