Effect of Zn substitution on the sintering temperature and microwave dielectric properties of MgSiO3-based ceramics

Mg1-xZnxSiO3 (x=0-0.3) ceramics were successfully synthesized by conventional solid-state methods and characterized by scanning electron microscopy, dispersive X-ray spectroscopy, and X-ray diffraction. The microstructures and microwave dielectric properties of Mg1-xZnxSiO3 ceramics were systematically investigated. The lattice parameters of the samples with different Zn2+ contents were analyzed. When the Zn2+ content was increased from 0 to 0.15, the Q(u)f(o) of the sample increased from 103,453 GHz to a maximum 138,481 GHz. This also resulted in a significant lowering in the sintering temperature (90 degrees C). Monoclinic structured Mg0.85Zn0.15SiO3 was detected without any secondary phase. In this study, a new combination of microwave dielectric properties (epsilon(r)similar to 8.05, Q(u)f(o)similar to 138,481 GHz, iota(p)similar to-14 ppm/degrees C) was achieved for Mg0.85Zn0.15SiO3 sample sintered at 1360 degrees C for 9 h. The prepared material with remarkable useful dielectric properties can be used for millimeter-wave applications.