Journal
2D MATERIALS
Volume 5, Issue 1, Pages -Publisher
IOP PUBLISHING LTD
DOI: 10.1088/2053-1583/aa91a7
Keywords
Molibdenum disulfide MoS2; transistor; hysteresis; mobility; charge trapping; memory; defect
Categories
Funding
- POR Campania FSE
- Asse III Ob.Specifico 14
- Avviso pubblico decreto dirigenziale [80]
- LR [5/2002, 0293185]
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We investigate the origin of the hysteresis observed in the transfer characteristics of back-gated field-effect transistors with an exfoliated MoS2 channel. We find that the hysteresis is strongly enhanced by increasing either gate voltage, pressure, temperature or light intensity. Our measurements reveal a step-like behavior of the hysteresis around room temperature, which we explain as water-facilitated charge trapping at the MoS2/SiO2 interface. We conclude that intrinsic defects in MoS2, such as S vacancies, which result in effective positive charge trapping, play an important role, besides H2O and O-2 adsorbates on the unpassivated device surface. We show that the bistability associated to the hysteresis can be exploited in memory devices.
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