Journal
APPLIED PHYSICS EXPRESS
Volume 11, Issue 1, Pages -Publisher
IOP PUBLISHING LTD
DOI: 10.7567/APEX.11.011601
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Funding
- CREST program of the Japan Science and Technology Agency (JST)
- program for Advancing Strategic International Networks
- Japan Society for the Promotion of Science (JSPS) [17H03134]
- Grants-in-Aid for Scientific Research [17H03134, 17J06061] Funding Source: KAKEN
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The charge carrier mobility of a poly(3-hexylthiophene) film was estimated using charge extraction by the linearly increasing voltage (CELIV) method under dark conditions. To estimate the mobility of a thin film with a thickness similar to that of an actual device, the effects of the built-in potential and depletion region at the counter electrode interface were investigated. The application of a forward bias before the voltage scan affected the estimated mobility, and flat-band conditions were required to estimate the mobility precisely. The dark CELIV mobility was compared with the mobility estimated by the space-charge-limited current method using thin films under the same conditions. (C) 2018 The Japan Society of Applied Physics
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