4.8 Article

Highly stretchable polymer semiconductor films through the nanoconfinement effect

Journal

SCIENCE
Volume 355, Issue 6320, Pages 59-+

Publisher

AMER ASSOC ADVANCEMENT SCIENCE
DOI: 10.1126/science.aah4496

Keywords

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Funding

  1. U.S. Department of Energy, Office of Science, Basic Energy Sciences [DE-SC0016523]
  2. Fonds de Recherche du Quebec: Nature et Technologies
  3. National Research Fund of Luxembourg [6932623]
  4. Hong Kong Innovation and Technology Commission [ITC-CNERC14SC01]
  5. National Science Foundation [CMMI-1553638]
  6. Office of Science, Office of Basic Energy Sciences, of the U.S. Department of Energy [DE-AC02-05CH11231, DE-AC02-76SF00515]
  7. U.S. Department of Energy (DOE) [DE-SC0016523] Funding Source: U.S. Department of Energy (DOE)
  8. National Research Foundation of Korea [21A20151513130] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
  9. Directorate For Engineering
  10. Div Of Civil, Mechanical, & Manufact Inn [1553638] Funding Source: National Science Foundation

Ask authors/readers for more resources

Soft and conformable wearable electronics require stretchable semiconductors, but existing ones typically sacrifice charge transport mobility to achieve stretchability. We explore a concept based on the nanoconfinement of polymers to substantially improve the stretchability of polymer semiconductors, without affecting charge transport mobility. The increased polymer chain dynamics under nanoconfinement significantly reduces the modulus of the conjugated polymer and largely delays the onset of crack formation under strain. As a result, our fabricated semiconducting film can be stretched up to 100% strain without affecting mobility, retaining values comparable to that of amorphous silicon. The fully stretchable transistors exhibit high biaxial stretchability with minimal change in on current even when poked with a sharp object. We demonstrate a skinlike finger-wearable driver for a light-emitting diode.

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