Influence of the Contact Area on the Current Density across Molecular Tunneling Junctions Measured with EGaIn Top-Electrodes

This paper describes the relationship between the rates of charge transport (by tunneling) across self-assembled monolayers (SAMs) in a metal/SAM//Ga2O3/EGaIn junction and the geometric contact area (Ag) between the conical Ga2O3/EGaIn top-electrode and the bottom-electrode. Measurements of current density, J(V), across SAMs of decanethiolate on silver demonstrate that J(V) increases with A(g) when the contact area is small (A(g) < 1000 mu m(2)), but reaches a plateau between 1000 and 4000 mu m(2), where J(0.5 V) approximate to 10(-0.52 +/- 0.10) A/cm(2). The method used to fabricate Ga2O3/EGaIn electrodes generates a tip whose apex is thicker and rougher than its thin, smoother sides. When A(g) is small, the Ga2O3/EGaIn electrode contacts the bottom-electrode principally over this rough apex and forms irreproducible areas of electrical contact. When A(g) is large, the contact is through the smoother regions peripheral to the apex and is much more reproducible. Measurements of contact pressure between conical EGaIn electrodes and atomic force microscope cantilevers demonstrate that the nominal contact pressure (governed by the mechanical behavior of the oxide skin) decreases approximately inversely with the diameter of geometric contact. This self-regulation of pressure prevents damage to the SAM and makes the ratio of electrical contact area to geometric footprint approximately constant.