Journal
IEEE SOLID-STATE CIRCUITS LETTERS
Volume 1, Issue 3, Pages 62-65Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LSSC.2018.2827881
Keywords
Avalanche photodiodes (APDs); CMOS technology; optical receiver; photon counting; quenching circuit (QC); single-photon avalanche diode (SPAD)
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In this letter, we present a fully integrated single-photon avalanche diode (SPAD) using a fast cascoded quenching circuit (QC) fabricated in a 0.35-mu m CMOS process. The QC features a fast active quenching time of only 0.48 ns and an adjustable total dead time (9.5-17 ns) to further reduce afterpulsing effects. To prove the quenching performance, the circuit was integrated together with a large-area SPAD having an active diameter of 80 mu m. Experimental verification of reduction of afterpulsing with early quenching is shown. Thus, a minimal afterpulsing probability of 0.9% was measured at 6.6 V excess bias and a photon detection probability of 22% at a wavelength of 850 nm was achieved.
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