Journal
RADIOCHIMICA ACTA
Volume 105, Issue 7, Pages 569-576Publisher
WALTER DE GRUYTER GMBH
DOI: 10.1515/ract-2016-2687
Keywords
Instrumental neutron activation analysis; transition metals; solar grade silicon; directional solidification
Funding
- Deutsche Forschungsgemeinschaft (DFG) [HA5471/4-1, BO3498/1]
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In a series of crystallization experiments, the directional solidification of silicon was investigated as a low cost path for the production of silicon wafers for solar cells. Instrumental neutron activation analysis was employed to measure the influence of different crystallization parameters on the distribution of 3d-metal impurities of the produced ingots. A theoretical model describing the involved diffusion and segregation processes during the solidification and cooling of the ingots could be verified by the experimental results. By successive etching of the samples after the irradiation, it could be shown that a layer of at least 60 mu m of the samples has to be removed to get real bulk concentrations.
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