Journal
PROGRESS IN PHOTOVOLTAICS
Volume 25, Issue 11, Pages 887-895Publisher
WILEY
DOI: 10.1002/pip.2930
Keywords
degradation; dilute nitride; 4-junction solar cell; MOVPE; thermal load
Funding
- European Commission [607153]
- Spanish MINECO [TEC2014-54260-C3-1-P, PCIN-2015-181-C02-02, RYC-2014-15621]
- Comunidad de Madrid [MADRID-PV S2013/MAE-2780]
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A GaInP/Ga(In)As/GaNAsSb/Ge 4J solar cell grown using the combined MOVPE+MBE method is presented. This structure is used as a test bench to assess the effects caused by the integration of subcells and tunnel junctions into the full 4J structure. A significant degradation of the Ge bottom subcell emitter is observed during the growth of the GaNAsSb subcell, with a drop in the carrier collection efficiency at the high energy photon range that causes a similar to 15% lower J(sc) and a V-oc drop of similar to 50mV at 1-sun. The V-oc of the GaNAsSb subcell is shown to drop by as much as similar to 140mV at 1-sun. No degradation in performance is observed in the tunnel junctions, and no further degradation is neither observed for the Ge subcell during the growth of the GaInP/Ga(In)As subcells. The hindered efficiency potential in this lattice-matched 4J architecture due to the degradation of the Ge and GaNAsSb subcells is discussed.
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