Journal
PROCEEDINGS OF THE NATIONAL ACADEMY OF SCIENCES OF THE UNITED STATES OF AMERICA
Volume 114, Issue 8, Pages 1783-1788Publisher
NATL ACAD SCIENCES
DOI: 10.1073/pnas.1609839114
Keywords
spintronics; circular polarization; semiconductors; nonlinear effect; spin injection
Categories
Funding
- Advanced Photon Science Alliance Project from the Ministry of Education, Culture, Sports, Science, and Technology
- Japan Society for the Promotion of Science [22226002]
- Strategic Information and Communication R&D Promotion Programme (SCOPE) from the Ministry of Internal Affairs and Communications [162103004]
Ask authors/readers for more resources
We report the room-temperature electroluminescence (EL) with nearly pure circular polarization (CP) from GaAs-based spinpolarized light-emitting diodes (spin-LEDs). External magnetic fields are not used during device operation. There are two small schemes in the tested spin-LEDs: first, the stripe-laser-like structure that helps intensify the EL light at the cleaved side walls below the spin injector Fe slab, and second, the crystalline AlOx spin-tunnel barrier that ensures electrically stable device operation. The purity of CP is depressively low in the low current density (J) region, whereas it increases steeply and reaches close to the pure CP when J > 100 A/cm(2). There, either right-or left-handed CP component is significantly suppressed depending on the direction of magnetization of the spin injector. Spin-dependent reabsorption, spin-induced birefringence, and optical spin-axis conversion are suggested to account for the observed experimental results.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available