Journal
PROCEEDINGS OF THE IEEE
Volume 105, Issue 6, Pages 1068-1086Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JPROC.2015.2500024
Keywords
BiCMOS; predictive device modeling; silicon-germanium (SiGe) heterojunction bipolar transistors (HBTs); technology computer-aided design (TCAD); technology roadmap
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Funding
- European Commission within the FP7 IP DOTSEVEN
- European Commission within the Catrene RF2THz project
- German National Science Foundation [SFB912 (HAEC), SCHR695/7]
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A technology roadmap for the electrical performance of high-speed silicon-germanium (SiGe) heterojunction bipolar transistors (HBTs) is presented based on combining the results of various 1-D, 2-D, and 3-D technology computer-aided design (TCAD) simulation tools with geometry scalable compact modeling. The latter, including all known parasitic effects, enables the accurate determination of the figures of merit for both devices and selected benchmark circuits. The presented roadmap defines five major technology nodes with the maximum oscillation frequency of a typical high-frequency device structure as the main device design target under the constraints of various other parameters for generating the doping profiles and for defining the lateral scaling factors. An extensive and consistent set of technology and electrical parameters is provided along with the obtained scaling rules. The expected fabrication-related challenges and possible solutions for achieving the predicted performance are being discussed. It is hoped that the presented roadmap will be useful not only for foundries and equipment manufacturers but also for circuit and system designers enabling better predictions of the capability of SiGe-BiCMOS process technology for new millimeter-wave (mm-wave) and terahertz (THz) applications.
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