Journal
POLYMER CHEMISTRY
Volume 8, Issue 23, Pages 3612-3621Publisher
ROYAL SOC CHEMISTRY
DOI: 10.1039/c7py00497d
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Funding
- R&D Convergence Program of the NST (National Research Council of Science & Technology) of the Republic of Korea [CAP-15-04-KITECH]
- New and Renewable Energy Program of the Korea Institute of Energy Technology Evaluation and Planning (KETEP) grant from the Korea Government Ministry of Trade, Industry Energy (MTIE) [20163030013900]
- National Research Foundation of Korea (NRF) grant from the Korean Government (MSIP) [2016R1A5A1012966, 2017R1C1B2010694]
- National Research Council of Science & Technology (NST), Republic of Korea [CAP-15-04-KITECH] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
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We synthesized the conjugated polymers PT2OBT, PVT2OBT, and PFBT2OBT for use in organic photo-detecting devices. An octyloxy benzothiadiazole (OBT) moiety was used as a weak electron-accepting building block in the polymer system to cause the dominant absorption in the green-light region via weakening the intramolecular charge transfer (ICT) interactions between adjacent electron-donating moieties. In particular, indirect X-ray detection using a scintillator requires a low leakage current; thus, we focused on designing a molecular structure that can enhance the detectivity. The difluorobenzene-incorporated PFBT2OBT polymer showed a strong edge-on orientation both in the pristine film and in the blend film; however, PT2OBT and PVT2OBT have no preferred molecular orientation in the blend film. In the edge-on structure, the alkyl side chains of PFBT2OBT align on the surface of the electrode, forming an insulating layer, which decreases the tunneling leakage current, whereas in the latter cases, the interface between the semiconducting polymer backbone and PC70BM can come into contact with the electrode, forming a pathway for the leakage current. Consequently, the PFBT2OBT: PC70BM devices showed promising detectivities of over 10(13) Jones over a wide range of reverse biases of up to -2 V, resulting from their low dark current density of less than 2.3 x 10(-9) A cm(-2).
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