Journal
PHYSICAL REVIEW B
Volume 97, Issue 23, Pages -Publisher
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.97.235133
Keywords
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Funding
- National Key Research and Development Program of China [2016YFA0401003]
- Natural Science Foundation of China [11774353, 11574320, 11374302, U1432251, U1732274]
- International Users of Hefei Science Center of CAS [2016HSC-IU009]
- CAS/SAFEA international partnership program for creative research teams of China
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We present the magnetoresistance (MR) and Hall resistivity of layered ternary Nb3SiTe6 thin flakes with magnetic field up to 33 T. The flakes show strong angle-dependent MR properties and unsaturated quasilinear dependence accompanied with Shubnikov-de Haas (SdH) oscillations. Hall resistivity study demonstrates that the hole carriers dominate the transport properties in the whole temperature range. The angle-dependent SdH oscillations reveal a two-dimensional Fermi surface of Nb3SiTe6. Furthermore, by analysis of SdH oscillations, we observed a nontrivial 7r-Berry phase in the SdH oscillations which suggests the nontrivial topological nature of Nb3SiTe6.
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