Journal
PHYSICAL REVIEW LETTERS
Volume 119, Issue 17, Pages -Publisher
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevLett.119.176803
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Funding
- Army Research Office [W911NF-15-1-0149]
- Gordon and Betty Moore Foundations EPiQS Initiative [GBMF4535]
- U.S. Department of Defense [H98230-15-C0453]
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We study an accumulation mode Si/SiGe double quantum dot (DQD) containing a single electron that is dipole coupled to microwave photons in a superconducting cavity. Measurements of the cavity transmission reveal dispersive features due to the DQD valley states in Si. The occupation of the valley states can be increased by raising the temperature or applying a finite source-drain bias across the DQD, resulting in an increased signal. Using the cavity input-output theory and a four-level model of the DQD, it is possible to efficiently extract valley splittings and the inter- and intravalley tunnel couplings.
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