Journal
PHYSICAL REVIEW LETTERS
Volume 119, Issue 1, Pages -Publisher
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevLett.119.017701
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Funding
- CREST, JST [JPMJCR15N2, JPMJCR1675]
- ImPACT Program of Council for Science, Technology and Innovation (Cabinet Office, Government of Japan)
- RIKEN Incentive Research Projects
- JSPS KAKENHI [16K05411, 17H05187, 16H00817, 26220710, JP16H02204]
- PRESTO, JST [JPMJPR16N3]
- Yazaki Memorial Foundation for Science and Technology Research Grant
- Advanced Technology Institute Research Grant
- Murata Science Foundation Research Grant
- Izumi Science and Technology Foundation Research Grant
- TEPCO Memorial Foundation Research Grant
- Thermal & Electric Energy Technology Foundation Research Grant
- Futaba Electronics Memorial Foundation Research Grant
- MST Foundation Research Grant
- Advanced Leading Graduate Course for Photon Science (ALPS)
- Mercur [Pr-2013-0001]
- BMBF-Q.com-H [16KIS0109]
- DFH/UFA [CDFA-05-06]
- [DFG-TRR160]
- Grants-in-Aid for Scientific Research [17H05187, 26220710, 16K05411, 16H00817] Funding Source: KAKEN
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We demonstrate a new method for projective single-shot measurement of two electron spin states (singlet versus triplet) in an array of gate-defined lateral quantum dots in GaAs. The measurement has very high fidelity and is robust with respect to electric and magnetic fluctuations in the environment. It exploits a long-lived metastable charge state, which increases both the contrast and the duration of the charge signal distinguishing the two measurement outcomes. This method allows us to evaluate the charge measurement error and the spin-to-charge conversion error separately. We specify conditions under which this method can be used, and project its general applicability to scalable quantum dot arrays in GaAs or silicon.
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