Journal
PHYSICAL REVIEW LETTERS
Volume 119, Issue 9, Pages -Publisher
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevLett.119.096402
Keywords
-
Categories
Funding
- EPSRC [EP/J500045/1, EP/M013243/1]
- EPSRC [EP/M508305/1, EP/M013243/1] Funding Source: UKRI
- Engineering and Physical Sciences Research Council [EP/M508305/1, EP/M013243/1] Funding Source: researchfish
Ask authors/readers for more resources
We demonstrate optical spin polarization of the neutrally charged silicon-vacancy defect in diamond (SiV0), an S = 1 defect which emits with a zero-phonon line at 946 nm. The spin polarization is found to be most efficient under resonant excitation, but nonzero at below-resonant energies. We measure an ensemble spin coherence time T-2 > 100 mu s at low-temperature, and a spin relaxation limit of T-1 > 25 s. Optical spin-state initialization around 946 nm allows independent initialization of SiV0 and NV- within the same optically addressed volume, and SiV0 emits within the telecoms down-conversion band to 1550 nm: when combined with its high Debye-Waller factor, our initial results suggest that SiV0 is a promising candidate for a long-range quantum communication technology.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available