Journal
PHYSICAL CHEMISTRY CHEMICAL PHYSICS
Volume 19, Issue 8, Pages 5806-5812Publisher
ROYAL SOC CHEMISTRY
DOI: 10.1039/c6cp08012j
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Funding
- Natural Science Foundation of Jiangsu province [BK20160787]
- China Postdoctoral Science Foundation
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The simultaneous introduction of shallow acceptors and elimination of donor compensation is the key issue toward achieving p-type ZnO. Herein, through accurate control of the Li dopant configuration and systematic spectroscopy characterization, we obtain direct evidence that Li doping creates isolated VZn in ZnO with a luminescence peak around 414 nm (similar to 3.0 eV), and at the same time, removes donors. Interestingly, the same defect emission is also created by simple H2O2 treatment and appeared in a ZnO single crystal with abundant metal vacancies, unambiguously demonstrating its shallow acceptor characteristic.
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