Journal
PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS
Volume 12, Issue 2, Pages -Publisher
WILEY-V C H VERLAG GMBH
DOI: 10.1002/pssr.201700381
Keywords
CuS; photodetectors; photodiodes; transparent conducting materials; transparent electronics; ZnS
Funding
- Office of Science, Office of Basic Energy Sciences, Materials Sciences and Engineering Division, of the U.S. Department of Energy [DE-AC02-05CH11231]
- Department of Energy through the Bay Area Photovoltaic Consortium [DE-EE0004946]
- U.S. Department of Energy, Office of Science, Office of Basic Energy Sciences [DE-AC02-76SF00515]
- National Natural Science Foundation of China [51471051, 11674061]
- Science and Technology Commission of Shanghai Municipality [15520720700]
- Chinese Scholarship Council
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Transparent diodes formed by a heterojunction between p-type CuS-ZnS and n-type ZnO thin films were fabricated by sequential chemical bath deposition and sol-gel spin coating. The diodes are transparent in the visible (approximate to 70% at 550nm) and exhibit a good rectifying characteristics, with I-f/I-r ratios of up to 800 at +/- 1V, higher than most of the reported solution-processed diodes measured at a similar bias. More importantly, when operated as a self-powered (zero bias) UV photodetector, they show stable and fast (<1s) photoresponse with a maximum responsivity of 12mAW(-1) at 300nm. Both the response time and responsivity of the p-CuZnS/n-ZnO UV photodiode are comparable or superior to similar solution-processed devices reported in the literature.
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