Thin Film Solar Cell Based on ZnSnN2/SnO Heterojunction

In this article, we report the growth of zinc-tin nitride (ZnSnN2) thin films as a potential absorber for photovoltaic applications by fabricating a heterojunction of n-ZnSnN2/p-SnO. The performance of the heterojunction has been monitored through selective deposition of top electrode with different materials (Ni/Au or Al). The electron-transfer process from the ZnSnN2 layer to the cathode is facilitated by selecting metal electrode with relatively low work function, which also boosts up the electron injection or/and extraction. The diode exhibits a good J-V response in the dark with a rectification ratio of 3x10(3) at 1.0V and an ideality factor of 4.2 in particular with Al as the top electrode. Under illumination, the heterostructure solar cell demonstrates a power conversion efficiency of approximate to 0.37% with an open circuit voltage of 0.25V and a short circuit current density of 4.16mAcm(-2). The prime strategies, on how to improve solar cell efficiency concerning band offsets and band alignment engineering are also discussed.