Journal
PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS
Volume 11, Issue 7, Pages -Publisher
WILEY-V C H VERLAG GMBH
DOI: 10.1002/pssr.201700136
Keywords
charge carrier mobility; chemical vapor deposition; dry transfer; graphene; MoS2
Funding
- EU project Graphene Flagship [696656]
- ERC [280140]
- Deutsche Forschungsgemeinschaft [SPP-1459, BE 2441/9-1]
- JSPS KAKENHI grant [JP26248061, JP15K21722, JP25106006]
Ask authors/readers for more resources
Recently, a contamination-free dry transfer method for graphene grown by chemical vapor deposition (CVD) has been reported that allows to directly pick-up graphene from the copper growth substrate using a flake of hexagonal boron nitride (hBN), resulting in ultrahigh charge carrier mobility and low overall doping. Here, we report that not only hBN, but also flakes of molybdenum disulfide (MoS2) can be used to dry transfer graphene. This, on one hand, allows for the fabrication of complex van-der-Waals heterostructures using CVD graphene combined with different two-dimensional materials and, on the other hand, can be a route toward a scalable dry transfer of CVD graphene. The resulting heterostructures are studied using low temperature transport measurements revealing a strong charge carrier density dependence of the carrier mobilities (up to values of 12,000 cm(2)/(Vs)) and the residual charge carrier density fluctuations near the charge neutrality point when changing the carrier density in the MoS2 by applying a top gate voltage. (C) 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available