Related references
Note: Only part of the references are listed.The isotype ZnO/SiC heterojunction prepared by molecular beam epitaxy-A chemical inert interface with significant band discontinuities
Yufeng Zhang et al.
SCIENTIFIC REPORTS (2016)
First-principles simulations of two dimensional electron gas near the interface of ZnO/GaN (0001) superlattice
Jie Lei et al.
PHYSICS LETTERS A (2015)
p-GaN/n-ZnO Heterojunction Nanowires: Optoelectronic Properties and the Role of Interface Polarity
Fabian Schuster et al.
ACS NANO (2014)
Dual-acceptor doped p-ZnO:(As,Sb)/n-GaN heterojunctions grown by PA-MBE as a spectrum selective ultraviolet photodetector
E. Przezdziecka et al.
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE (2014)
Piezoelectric nanogenerators-Harvesting ambient mechanical energy at the nanometer scale
Xudong Wang
NANO ENERGY (2012)
Formation of a two-dimensional electron gas in ZnO/MgZnO single heterostructures and quantum wells
Matthias Brandt et al.
THIN SOLID FILMS (2009)
Inversion domain boundary in a ZnO film
Y. Z. Liu et al.
PHILOSOPHICAL MAGAZINE LETTERS (2007)
Effects of cation d states on the structural and electronic properties of III-nitride and II-oxide wide-band-gap semiconductors
Anderson Janotti et al.
PHYSICAL REVIEW B (2006)
First-principles study of intrinsic point defects in ZnO: Role of band structure, volume relaxation, and finite-size effects
Paul Erhart et al.
PHYSICAL REVIEW B (2006)
The electron localization function (ELF) and its relatives: interpretations and difficulties
A Savin
JOURNAL OF MOLECULAR STRUCTURE-THEOCHEM (2005)
Polarity control of ZnO films grown on nitrided c-sapphire by molecular-beam epitaxy -: art. no. 011921
XQ Wang et al.
APPLIED PHYSICS LETTERS (2005)
Inversion domain boundaries in ZnO: First-principles total-energy calculations
YF Yan et al.
PHYSICAL REVIEW B (2004)
Energetics and electronic structure of stacking faults in ZnO
YF Yan et al.
PHYSICAL REVIEW B (2004)
ZnO-based transparent thin-film transistors
RL Hoffman et al.
APPLIED PHYSICS LETTERS (2003)
Origin and consequences of a high stacking fault density in epitaxial ZnO layers
D Gerthsen et al.
APPLIED PHYSICS LETTERS (2002)
Synthesis and characterization of ZnO thin films for UV laser
A Mitra et al.
APPLIED SURFACE SCIENCE (2001)
Control of polarity of ZnO films grown by plasma-assisted molecular-beam epitaxy: Zn- and O-polar ZnO films on Ga-polar GaN templates
SK Hong et al.
APPLIED PHYSICS LETTERS (2000)
Mosaic growth of GaN on (0001) sapphire:: A high-resolution electron microscopy and crystallographic study of threading dislocations from low-angle to high-angle grain boundaries
V Potin et al.
PHYSICAL REVIEW B (2000)
Two dimensional electron gases induced by spontaneous and piezoelectric polarization in undoped and doped AlGaN/GaN heterostructures
O Ambacher et al.
JOURNAL OF APPLIED PHYSICS (2000)
Share Paper
