Journal
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
Volume 215, Issue 4, Pages -Publisher
WILEY-V C H VERLAG GMBH
DOI: 10.1002/pssa.201700428
Keywords
beta-In2S3; chemical bath deposition; solar cells; thin films
Funding
- CONACYT [CeMIE-SOL P25]
- COFAA-Instituto Politecnico Nacional [SIP 20170315, SIP 20170141]
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In2S3 thin films are prepared by chemical bath deposition (CBD) technique to be applied as buffer layer in CdTe solar cells. CdTe photovoltaic devices are developed using In2S3 as standard buffer layer in order to reduce the CdS thickness used as window material. It is important to examine potential thin films in a prospective life cycle study, focusing on direct costs, resource availability, and environmental impacts. Open and closed CBD system influence on the In2S3 physical properties is analyzed. Stable tetragonal -In2S3 phase was confirmed by X-ray diffraction. Electrical properties were determined by four-point probe technique obtaining a resistivity value of 10(2)cm. CdTe solar cells performance was studied by measuring J-V characteristics and spectral quantum efficiencies. These results reveal In2S3 thin films as buffer layer reduce the cadmium quantity used in solar cells manufacture and improve their current collection in blue wavelength region (300-500nm).
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