Journal
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES
Volume 89, Issue -, Pages 67-71Publisher
ELSEVIER SCIENCE BV
DOI: 10.1016/j.physe.2017.02.006
Keywords
Thin films; Oxide semiconductors; Sputtering; Optical properties; Quantum confinement; Potential morphing method
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Thin iron films in the thickness range 0.7-48 nm have been deposited on high quality Corning glass and Si(100) substrates by radio frequency magnetron sputtering. The films were then oxidized by annealing at temperatures of 400-450 degrees C in a furnace in air. X-ray diffraction experiments revealed the formation of single-phase alpha-Fe2O3. The films were continuous and present negligible surface roughness. Ultraviolet-visible light absorption spectroscopy has shown a blue shift of both, the indirect and direct band gaps of hematite. The experimental results are interpreted as evidences of quantum confinement effects. This is facilitated by theoretical calculations based on Hartree Fock approximation as applied for an electron-hole system, in the framework of effective mass approximation. The agreement between theory and experiment supports the quantum confinement interpretation.
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