4.7 Article

Highly efficient Ternary Solar Cells of 10.2% with Core/Shell Quantum Dots via FRET Effect

Journal

SOLAR RRL
Volume 2, Issue 9, Pages -

Publisher

WILEY-V C H VERLAG GMBH
DOI: 10.1002/solr.201800077

Keywords

electron transport layer; Forster resonance energy transfer; power conversion efficiency; quantum dots; surface potential; ternary solar cells

Funding

  1. New and Renewable Energy Core Technology Program of the Korea Institute of Energy Technology Evaluation and Planning (KETEP) - Ministry of Trade, Industry and Energy, Republic of Korea [20153010140030]
  2. Human Resources Program in Energy Technology of the Korea Institute of Energy Technology Evaluation and Planning (KETEP) - Ministry of Trade, Industry and Energy, Republic of Korea [20174010201540]

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Ternary organic solar cells (OSCs) with the efficiency over 10% are fabricated as an inverted structure with core/shell type quantum dots (QDs) as third component. Forster resonance energy transfer occurs due to overlap between the emission range ((em)=500-800nm) of InP/ZnS QDs and the absorption range ((abs)=550-800nm) of PTB7-Th donor polymer. InP/ZnS QDs increase the photocurrent of the hybrid active layer via the strong emission properties of ZnS shells surrounding the InP core QDs, which transfer photon energy to PTB7-Th (UV-vis spectroscopy and photoluminescence). X-ray photoelectron spectroscopy (XPS) depth profiling reveals that InP/ZnS QDs are distributed on the surface of the hybrid active layer, while grazing-incidence wide-angle X-ray scattering (GIWAXS) analysis reveals that these QDs enhance the crystalline structure of the hybrid active layer. The incorporation of an ethanedithiol (EDT)-modified ZnO layer as an electron transport layer enhances the carrier transport and decreases carrier recombination, providing a uniform morphology and surface potential favorable for electron extraction and transport, as indicated by atomic force microscopy and electrostatic force microscopy analyses. Due to the synergistic effects of InP/ZnS QDs and the EDT-modified ZnO layer, the power conversion efficiency (PCE) is 10.2% via the enhancement in short-circuit current density (J(SC)) from 17.4 to 18.4mAcm(-2) and fill factor (FF) from 67.2 to 69.3%.

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