Journal
PHYSICAL REVIEW B
Volume 98, Issue 5, Pages -Publisher
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.98.054425
Keywords
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Funding
- Higher Education Research Promotion
- National Research University Project of Thailand
- Office of the Higher Education Commission
- Thailand Research Fund [MRG5980185]
- Science Foundation of Ireland [14/IA/2624]
- European Union's Horizon 2020 PETMEM project
- European Union's Horizon 2020 TRANSPIRE project
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By imposing the constraints of structural compatibility, stability, and a large tunneling magneto-resistance, we have identified the Fe3Al/BiF3/Fe3Al stack as a possible alternative to the well-established FeCoB/MgO/FeCoB in the search for a novel materials platform for high-performance magnetic tunnel junctions. Various geometries of the Fe3Al/BiF3/Fe3Al structure have been analyzed, demonstrating that a barrier of less than 2 nm yields a tunneling magneto-resistance in excess of 25 000% at low bias, without the need for the electrodes to be half-metallic. Importantly, the presence of a significant spin gap in Fe3Al for states with Delta(1) symmetry along the stack direction makes the TMR very resilient to high voltages.
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