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IOP PUBLISHING LTD
DOI: 10.1088/1742-6596/1052/1/012011
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Amorphous InGaZnO (a-InGaZnO) has already been proved to have good applications in thin-film transistor devices for display application. The a-InGaZnO is n-type semiconductor material and has enormous potential such as transparency, a low temperature fabrication process. Thus, the application of a-InGaZnO to flexible electronics and sensors has been studied. A low thermal conductivity and a low temperature process are merit for a thin film or a flexible thermoelectric module application. In this study, thermoelectric properties of a-IGZO thin film are evaluated. Transparent thermoelectric generator was demonstrated using a-InGaZnO and ITO electrodes.
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