Journal
ENERGY & ENVIRONMENTAL SCIENCE
Volume 8, Issue 9, Pages 2644-2649Publisher
ROYAL SOC CHEMISTRY
DOI: 10.1039/c5ee01687h
Keywords
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Funding
- Office of Science of the U.S. Department of Energy [DE-SC0004993]
- National Science Foundation
- Gordon and Betty Moore Foundation [GBMF1225]
- Joint Center for Artificial Photosynthesis, a DOE Energy Innovation Hub
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Introduction of an ultrathin (2 nm) film of cobalt oxide (CoOx) onto n-Si photoanodes prior to sputter-deposition of a thick multifunctional NiOx coating yields stable photoelectrodes with photocurrent-onset potentials of similar to -240 mV relative to the equilibrium potential for O-2(g) evolution and current densities of similar to 28 mA cm(-2) at the equilibrium potential for water oxidation when in contact with 1.0 M KOH(aq) under 1 sun of simulated solar illumination. The photoelectrochemical performance of these electrodes was very close to the Shockley diode limit for moderately doped n-Si(100) photoelectrodes, and was comparable to that of typical protected Si photoanodes that contained np(+) buried homojunctions.
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