Journal
ORGANIC ELECTRONICS
Volume 42, Issue -, Pages 21-27Publisher
ELSEVIER SCIENCE BV
DOI: 10.1016/j.orgel.2016.12.020
Keywords
Bans structures; Phosphorene nanoribbons; Negative differential resistance; Density-functional theory; Non-equilibrium Green's function
Funding
- National Natural Science Foundation of China [11674039, 51302022, 61306149]
- Hunan Provincial Natural Science Foundation of China [2015JJ2013]
- Scientific Research Fund of Hunan Provincial Education Department [15A004]
- Jiangxi Provincial Natural Science Foundation of China [20122BAB212009]
- Scientific Research Fund of Jiangxi Provincial Education Department of China [GJJ12601, GJJ151026]
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By performing first-principle quantum transport calculations, we investigated the effects of the edge types and edge defects on the electronic and transport properties of phosphorene nanoribbons (PNRs). The calculated band structures show the PNRs with the zigzag and cliff edges are all metallic. The conductance of the cliff phosphorene nanoribbon (CPNR) is higher than that of the zigzag phosphorene nanoribbon (ZPNR). The low bias negative differential resistance behavior is only found in the ZPNR and the peak-to-valley current ratio is up to 10(2). More over, we found the carrier transport channels under low bias of ZPNR and CPNR mainly locate on the edges. The current-voltage characteristics show the defects induced by removing the phosphorus atoms from the edge can decrease the conductance of the ZPNR and CPNR obviously. The low bias negative differential resistance behavior of the ZPNR also can be weakened or removed by the edge defects. (C) 2016 Elsevier B.V. All rights reserved.
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