4.6 Article

Heterogeneous integration of lithium niobate and silicon nitride waveguides for wafer-scale photonic integrated circuits on silicon

Journal

OPTICS LETTERS
Volume 42, Issue 4, Pages 803-806

Publisher

OPTICAL SOC AMER
DOI: 10.1364/OL.42.000803

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Funding

  1. Defense Sciences Office (DARPA) MTO DODOS [HR0011-15-C-055]
  2. Seventh Framework Programme (FP7) [iQUOEMS 323924]
  3. Swiss National Science Foundation

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An ideal photonic integrated circuit for nonlinear photonic applications requires high optical nonlinearities and low loss. This work demonstrates a heterogeneous platform by bonding lithium niobate (LN) thin films onto a silicon nitride (Si3N4) waveguide layer on silicon. It not only provides large second-and third-order nonlinear coefficients, but also shows low propagation loss in both the Si3N4 and the LN-Si3N4 waveguides. The tapers enable lowloss- mode transitions between these two waveguides. This platform is essential for various on-chip applications, e.g., modulators, frequency conversions, and quantum communications. (C) 2017 Optical Society of America

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