Journal
OPTICS LETTERS
Volume 42, Issue 17, Pages 3403-3406Publisher
OPTICAL SOC AMER
DOI: 10.1364/OL.42.003403
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Funding
- National Natural Science Foundation of China (NSFC) [61376123, 61435005, 61522503]
- National Key Research and Development Program of China [2017YFB1104300, 2017YFB1104601]
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We reported here a facile fabrication of flexible graphene-based field effect transistors (FETs) by sunlight reduction of graphene oxide (GO) as channel material. As a mask-free and chemical-free method, sunlight photoreduction of GO without the use of any complex equipments is simple and green. The resultant FET demonstrated excellent electrical properties (e.g., an optimized I on/I off ratio of 111, hole mobility of 0.17 cm(2) V-1 s(-1)), revealing great potential for development of flexible microelectrics. Additionally, since the reduced GO channel could be fabricated by sunlight treatment between two pre-patterned electrodes, the process features post-fabrication capability, which makes it possible to integrate graphene-based devices with given device structures. (C) 2017 Optical Society of America
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