Journal
OPTICS LETTERS
Volume 43, Issue 1, Pages 94-97Publisher
OPTICAL SOC AMER
DOI: 10.1364/OL.43.000094
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Funding
- Defense Advanced Research Projects Agency (DARPA) (Extreme Optics and Imaging (EXTREME))
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In this Letter, we propose a broadband, nonvolatile on-chip switch design in the telecommunication C-band with record low loss and crosstalk. The unprecedented device performance builds on: 1) a new optical phase change material (O-PCM) Ge2Sb2Se4Te1 (GSST), which exhibits significantly reduced optical attenuation compared to traditional O-PCMs, and 2) a nonperturbative design that enables low-loss device operation beyond the classical figure-of- merit (FOM) limit. We further demonstrate that the 1-by-2 and 2-by-2 switches can serve as basic building blocks to construct nonblocking and nonvolatile on-chip switching fabric supporting arbitrary numbers of input and output ports. (C) 2017 Optical Society of America
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