Journal
OPTICS EXPRESS
Volume 25, Issue 22, Pages 26853-26860Publisher
OPTICAL SOC AMER
DOI: 10.1364/OE.25.026853
Keywords
-
Categories
Funding
- Advanced Research Projects Agency-Energy (ARPA-E) [DE-AR0000672]
- Research Grants Council of Hong Kong (RGC) [16212115]
- Innovation Technology Fund of Hong Kong [ITS/320/14]
Ask authors/readers for more resources
We report statistical comparisons of lasing characteristics in InAs quantum dot (QD) micro-rings directly grown on on-axis (001) GaP/Si and V-groove (001) Si substrates. CW thresholds as low as 3 mA and high temperature operation exceeding 80 degrees C were simultaneously achieved on the GaP/Si template template with an outer-ring radius of 50 mu m and a ring width of 4 mu m, while a sub-milliamp threshold of 0.6 mA was demonstrated on the V-groove Si template with a smaller cavity size of 5-mu m outer-ring radius and 3-mu m ring width. Evaluations were also made with devices fabricated simultaneously on native GaAs substrates over a significant sampling analysis. The overall assessment spotlights compelling insights in exploring the optimum epitaxial scheme for low-threshold lasing on industry standard Si substrates. (C) 2017 Optical Society of America
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available