Journal
OPTICS EXPRESS
Volume 25, Issue 16, Pages 18502-18507Publisher
OPTICAL SOC AMER
DOI: 10.1364/OE.25.018502
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- National University of Singapore Trailblazer [R-263-000-B43-733]
- Ministry of Education (MOE) Academic Research Fund [R-263-000-B50-112]
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The floating-base germanium-tin (Ge1-xSnx) heterojunction phototransistor (HPT) is designed and investigated as an efficient optical receiver in the short-wave infrared range. Simulations indicate that as the Sn content increases, the responsivity significantly increases due to a higher absorption coefficient and a larger valence band offset between Ge and Ge1-xSnx. Ge0.935Sn0.065 HPTs that incorporated high-quality Ge0.935Sn0.065 film grown by molecular beam epitaxy were fabricated, demonstrating optical response beyond wavelength of 2003 nm. At a low bias voltage of 1.0 V, optical response enhancement of similar to 10 times was achieved over the conventional Ge0.935Sn0.065 p-i-n photodiode. High responsivities of similar to 1.8 A/W at 1550 nm and similar to 0.043 A/W at 2003 nm were demonstrated with low dark current density of 0.147 A/cm(2). (C) 2017 Optical Society of America
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