Journal
OPTICS EXPRESS
Volume 25, Issue 25, Pages 32110-32119Publisher
OPTICAL SOC AMER
DOI: 10.1364/OE.25.032110
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- Masdar Institute of Science and Technology
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In this paper, germanium metal-semiconductor-metal photodetectors (MSM PDs) are fabricated on Si using a low-temperature two-step deposition technique by RF-PECVD. The photodetectors are optimized to effectively suppress the dark current through the insertion of n-type a-Si: H interlayer between the metal/Ge interface. Tuning the Schottky Barrier Height (SBH) by inserting different thickness of the interlayer is investigated. Results revealed that SBH for electrons and holes can effectively be enhanced by 0.3eV and 0.54eV, respectively. Furthermore, the dark-current (IDark) is suppressed significantly by more than four orders of magnitude. The measured IDark is similar to 76 nA for an applied reverse bias of 1.0 V. Additionally, the Ge MSMs structure exhibited a photo responsivity of 0.8A/W at that bias. The proposed low-temperature (< 550 degrees C) Ge-on-Si MSM PD demonstrates a great potential for high-performance Ge-based photodetectors in monolithically integrated CMOS platform. (C) 2017 Optical Society of America
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